Thermal and electronic properties of Bi1 x2212; xSbx alloys

Dutta, Soma and Shubha, V and Ramesh, TG and D'sa, Florita (2009) Thermal and electronic properties of Bi1 x2212; xSbx alloys. Journal of Alloys and Compounds, 467 (1-2). pp. 305-309.

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Polycrystalline Bi1 x2212; xSbx (x = 0.10, 0.12 and 0.15) semiconducting alloys were synthesized by mechanical alloying in order to achieve homogeneous thermoelectric materials with improved mechanical strength. The homogeneity of the powder samples were repeatedly checked by X-ray diffraction and scanning electron microscopy to standardize the milling conditions. The best possible homogenized material was developed with the milling conditions of BPR 30:1, ball diameter 30 mm, 400 rpm and milling time of 15 h. The electrical resistivity, thermoelectric power and thermal conductivity were measured in the temperature range 300x2013;500 K. It was found through these experiments that the composition with x = 0.12 behaved in a normal semiconducting way, whereas the other two compositions (x = 0.10 and 0.15) showed degenerate semiconductor behaviour. These features have been qualitatively explained from the band structure and interband scattering mechanisms.

Item Type: Article
Uncontrolled Keywords: Semiconductors;Mechanical alloying;Electronic transport;High pressure;Thermal analysis
Subjects: AERONAUTICS > Aeronautics (General)
Depositing User: Ms. Alphones Mary
Date Deposited: 03 Jun 2009
Last Modified: 10 Aug 2015 06:05

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