Dutta, Soma and Shubha, V and Ramesh, TG and D'sa, Florita (2009) Thermal and electronic properties of Bi1 x2212; xSbx alloys. Journal of Alloys and Compounds, 467 (1-2). pp. 305-309.
Full text not available from this repository.Abstract
Polycrystalline Bi1 x2212; xSbx (x = 0.10, 0.12 and 0.15) semiconducting alloys were synthesized by mechanical alloying in order to achieve homogeneous thermoelectric materials with improved mechanical strength. The homogeneity of the powder samples were repeatedly checked by X-ray diffraction and scanning electron microscopy to standardize the milling conditions. The best possible homogenized material was developed with the milling conditions of BPR 30:1, ball diameter 30 mm, 400 rpm and milling time of 15 h. The electrical resistivity, thermoelectric power and thermal conductivity were measured in the temperature range 300x2013;500 K. It was found through these experiments that the composition with x = 0.12 behaved in a normal semiconducting way, whereas the other two compositions (x = 0.10 and 0.15) showed degenerate semiconductor behaviour. These features have been qualitatively explained from the band structure and interband scattering mechanisms.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Semiconductors;Mechanical alloying;Electronic transport;High pressure;Thermal analysis |
| Subjects: | AERONAUTICS > Aeronautics (General) |
| Depositing User: | Ms. Alphones Mary |
| Date Deposited: | 03 Jun 2009 |
| Last Modified: | 10 Aug 2015 06:05 |
| URI: | http://nal-ir.nal.res.in/id/eprint/5135 |
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