Singh, AK (1990) Kinetics of Bi(II)transition under very high pressurization rates. High Pressure Research, 4 (1). pp. 336-338.
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Abstract
The occurrence of Bi(I) x2192; Bi(II) transition has been examined under constant pressurization rates in the range 0.03 to 0.1GPa/(x3BC;s) by monitoring the electrical resistance of the specimen as a function of time. Such high pressurization rates have been obtained by impacting a tungsten carbide opposed anvil setup with a low velocity projectile [Rev. Sci. Instum. 60, 253 (1989)]. The time taken for the completion of the transition decreases with the increasing pressurization rate.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Pressure pulse;Bismuth transition;Transition kinetics |
| Subjects: | CHEMISTRY AND MATERIALS > Chemistry and Materials (General) |
| Depositing User: | M/S ICAST NAL |
| Date Deposited: | 23 Jun 2008 |
| Last Modified: | 24 May 2010 04:26 |
| URI: | http://nal-ir.nal.res.in/id/eprint/4754 |
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