Ramesh, TG and Shubha, V (1982) Transport properties under pressure in HgSe. Journal of Physics C Solid state Physics, 15 (30). pp. 6193-6198. ISSN 0022-3719
Full text not available from this repository.Abstract
Measurements of the Seebeck coefficient or thermoelectric power (TEP) of HgSe at high pressures confirm the existence of an inverted band ordering, similar to that in HgTe. The pressure-induced phase transition from the zincblende to the cinnabar-type structure, which occurs around 10 kbar, is manifested as a large change in TEP. The temperature behaviour of the resistivity has also been studied in both of these structural modifications. These studies indicate that the energy gap in the high-pressure semiconducting phase decreases with increase of pressure; this is similar to what is observed in the elemental semiconductors Se and Te13;
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Energy gap;High-pressure solid-state phase transformations13; ;Semiconductors;Mercury compounds;Seebeck effect |
| Subjects: | CHEMISTRY AND MATERIALS > Chemistry and Materials (General) |
| Depositing User: | Ms Indrani V |
| Date Deposited: | 06 Feb 2008 |
| Last Modified: | 24 May 2010 04:25 |
| URI: | http://nal-ir.nal.res.in/id/eprint/4174 |
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