Shubha, V and Ramesh, TG (1988) Pressure studies on SmO.82DYO.18S. Technical Report. National Aeronautical Laboratory, Bangalore, India.
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Abstract
We report here some new measurements on the thermoelectric13; behaviour of the doped system SmO.82DYO.18S upto 25 Kbar and 300xB0;C. It has been found that an isostructural electronic phase transition occurs in this system around 2 Kbar at ambient temperature. The P-T diagram delineated from these experimental13; results exhibits a critical point around 280xB0;C and 4.75 Kbar.
| Item Type: | Monograph (Technical Report) |
|---|---|
| Uncontrolled Keywords: | Critical point;Valence fluctuation |
| Subjects: | CHEMISTRY AND MATERIALS > Chemistry and Materials (General) |
| Depositing User: | M/S ICAST NAL |
| Date Deposited: | 08 Nov 2006 |
| Last Modified: | 24 May 2010 04:22 |
| URI: | http://nal-ir.nal.res.in/id/eprint/3217 |
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