Gopalakrishnan, PS and Lakshminarasimham, PS (1995) Preparation and nitridation of silicon whiskers. Journal of Materials Science Letters, 14 (1). pp. 31-32. ISSN 0261-8028
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Abstract
The preparation of high-purity silicon nitride powder (useful as high-temperature ceramic material) from silicon tetrachloride has been studied. Zinc was chosen for reduction to Si, which involved vapour reaction in a two-zone horizontal furnace. The silicon nitride whiskers formed were characterized by x-ray diffraction (XRD) and electron microscopy. The whiskers were very thin (approx 0.5 mu m, length gt; 1 cm) at low reaction temperature (950 deg C). In situ nitration with increased nitrogen flow was tried without success, although 0.1 mu m whisker thickness was obtained, and dry ammonia gas was then used for separate nitration at 1200-1300 deg C. XRD and infrared absorption data revealed alpha -Si sub 3 N sub 4 as the product (thickness 0.5, length approx 12 mu m). Such whisker-like particles with uniform aspect ratio may also be useful in ceramic composites.
| Item Type: | Article |
|---|---|
| Additional Information: | Copyright for this article belongs to Chapman amp; Hall |
| Uncontrolled Keywords: | Silicon nitride;Synthesis;Whiskers;Nitration;Silicon;Reactions (chemical);Nitriding;Silicon nitrides;Whiskers(crystals);X ray diffraction;Infrared absorption |
| Subjects: | CHEMISTRY AND MATERIALS > Nonmetallic Materials |
| Depositing User: | M/S ICAST NAL |
| Date Deposited: | 10 Oct 2006 |
| Last Modified: | 24 May 2010 04:21 |
| URI: | http://nal-ir.nal.res.in/id/eprint/2928 |
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