Lakshminarasimham, PS and Gopalakrishnan, PS (1995) Bulk oxygen in alpha-silicon nitride and its effect on IR absorption. Journal of Materials Science Letters, 14 (24). pp. 1801-1803. ISSN 0261-8028
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Abstract
Results of an IR absorption characterization of alpha silicon nitride specimens prepared in the laboratory by several different procedures are presented. The results suggest the presence of bulk oxygen in the silicon nitride lattice. It is concluded that, although it is not necessary that alpha silicon nitride have bulk oxygen to stabilize its structure, it can accommodate a considerable amount of bulk oxygen without becoming oxynitride structurally.
Item Type: | Article |
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Additional Information: | Copyright for this article belongs to Springer-Verlag |
Uncontrolled Keywords: | Silicon nitrides;Infrared absorption;Oxygen;Hexagonal cells; Close packed lattices;Oxynitrides;X-ray diffraction;Diffraction patterns |
Subjects: | CHEMISTRY AND MATERIALS > Nonmetallic Materials |
Depositing User: | M/S ICAST NAL |
Date Deposited: | 09 Oct 2006 |
Last Modified: | 24 May 2010 04:21 |
URI: | http://nal-ir.nal.res.in/id/eprint/2927 |
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