Kulkarni, P D and Khan, Jakeer and Predeep, P and Chowdhury, P (2016) Thermally induced perpendicular magnetic anisotropy in CoFeB/MgO/CoFeB based magnetic tunnel junction. In: AIP Conference Proceedings.
Full text not available from this repository.Abstract
Thin films of CoFeB/MgO/CoFeB based MTJ structure were deposited using UHV magnetron sputtering system and post annealing treatment in the temperature range from 100 to 400 °C has been carried out to understand their magnetic anisotropic properties. Though the as-deposited stack possesses in-plane magnetic anisotropy, the changeover to perpendicular magnetic anisotropy happens at temperature above 200 °C. The PMA is maximum (4.5 x 106 erg/cm3) when annealed at 300°C and the stack retains PMA till 350 °C, which is necessary in CMOS technology. The stack regains in-plane magnetic anisotropy at higher annealing temperatures due to intermixing at interfaces.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | CHEMISTRY AND MATERIALS > Composite Materials CHEMISTRY AND MATERIALS > Inorganic, Organic and Physical Chemistry |
| Depositing User: | Mrs SK Pratibha |
| Date Deposited: | 29 Mar 2019 04:44 |
| Last Modified: | 29 Mar 2019 04:44 |
| URI: | http://nal-ir.nal.res.in/id/eprint/12981 |
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