Growth, characterization and interfacial reaction of magnetron sputtered Pt/CeO2 thin films on Si and Si3N4substrates

Anandan, C and Bera, Parthasarathi (2015) Growth, characterization and interfacial reaction of magnetron sputtered Pt/CeO2 thin films on Si and Si3N4substrates. Surface and Interface Analysis, 47 (7). pp. 777-784. ISSN 01422421

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Official URL: https://onlinelibrary.wiley.com/doi/abs/10.1002/si...

Abstract

Growth of magnetron sputtered Pt/CeO<inf>2</inf> thin films on Si and Si<inf>3</inf>N<inf>4</inf> were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). Interaction of Pt/CeO<inf>2</inf> films with Si on Si and Si<inf>3</inf>N<inf>4</inf> substrates was extensively investigated by XPS. XRD studies show that films are oriented preferentially to (200) direction of CeO<inf>2</inf>. XPS results show that Pt is mainly present in +2 oxidation state in Pt/CeO<inf>2</inf>/Si film, whereas Pt4+ predominates in Pt/CeO<inf>2</inf>/Si<inf>3</inf>N<inf>4</inf> film. Concentration of Pt4+ species is more than four times on Si<inf>3</inf>N<inf>4</inf> substrate as compared with that on Si. Ce is present as both +4 and +3 oxidation states in Pt/CeO<inf>2</inf> films deposited on Si and Si<inf>3</inf>N<inf>4</inf> substrates, but concentration of Ce3+ species is more in Pt/CeO<inf>2</inf>/Si film. Interfacial reaction between CeO<inf>2</inf> and Si substrate is controlled in the presence of Pt. Pt/Ce concentration ratio decreases in Pt/CeO<inf>2</inf>/Si<inf>3</inf>N<inf>4</inf> film upon successive sputtering, whereas this ratio decreases initially and then increases in Pt/CeO<inf>2</inf>/Si film.

Item Type: Article
Subjects: CHEMISTRY AND MATERIALS > Chemistry and Materials (General)
Depositing User: Mr. BS Shivaram
Date Deposited: 16 May 2018 10:23
Last Modified: 16 May 2018 10:23
URI: http://nal-ir.nal.res.in/id/eprint/12636

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