Tuning of deep level emission in highly oriented electrodeposited ZnO nanorods by post growth annealing treatments

Simimol, A and Manikandanath, NT and Anappara, AA and Chowdhury, P and Barshilia, Harish C (2014) Tuning of deep level emission in highly oriented electrodeposited ZnO nanorods by post growth annealing treatments. Journal of Applied Physics, 116 (7). ISSN 0021-8979

[img] PDF
Restricted to Registered users only

Download (1MB) | Request a copy
Official URL: http://dx.doi.org/10.1063/1.4893550


Highly dense and c-axis oriented zinc oxide (ZnO) nanorods with hexagonal wurtzite facets were deposited on fluorine doped tin oxide coated glass substrates by a simple and cost-effective electrodeposition method at low bath temperature (80 °C). The as-grown samples were then annealed at various temperatures (TA = 100–500 °C) in different environments (e.g., zinc, oxygen, air, and vacuum) to understand their photoluminescence (PL) behavior in the ultra-violet (UV) and the visible regions. The PL results revealed that the as-deposited ZnO nanorods consisted of oxygen vacancy (VO), zinc interstitial (Zn i), and oxygen interstitial (Oi) defects and these can be reduced significantly by annealing in different environments at optimal annealing temperatures. However, the intensity of deep level emission increased for TA greater than the optimized values for the respective environments due to the introduction of various defect centers. For example, for TA ≥ 450 °C in the oxygen and air environments, the density of Oi defects increased, whereas, the green emission associated with VO is dominant in the vacuum annealed (TA = 500 °C) ZnO nanorods. The UV peak red shifted after the post-growth annealing treatments in all the environments and the vacuum annealed sample exhibited highest UV peak intensity. The observations from the PL data are supported by the micro-Raman spectroscopy. The present study gives new insight into the origin of different defects that exist in the electrodeposited ZnO nanorods and how these defects can be precisely controlled in order to get the desired emissions for the opto-electronic applications.

Item Type: Article
Additional Information: Copyright to this article belongs to M/s. American Institute of Physics
Uncontrolled Keywords: Deep level emission;Micro-Raman spectroscopy;UV peak intensity;Annealing treatment
Subjects: CHEMISTRY AND MATERIALS > Chemistry and Materials (General)
Depositing User: Ms. Alphones Mary
Date Deposited: 17 Aug 2015 05:01
Last Modified: 17 Aug 2015 05:01
URI: http://nal-ir.nal.res.in/id/eprint/12296

Actions (login required)

View Item View Item