Kulkarni, PD and Krishnan, M and Barshilia, Harish C and Predeep, P and Chowdhury, P (2013) Development of pinned electrode for magnetic tunnel junction with perpendicular magnetic anisotropy. In: IUMRS-ICA-2013, 16 Dec 2013, IISc, Bangalore.
![[img]](https://nal-ir.nal.res.in/style/images/fileicons/application_pdf.png) |
PDF
cp148.pdf Download (38kB) |
Abstract
The magnetic electrodes with perpendicular magnetic anisotropy (PMA) have gained a great deal of attention in magnetic information storage technology. The use of perpendicular magnetic tunnel junctions (p-MTJs) enhances the storage density due to the reduction in area required for a unit bit. Among two electrodes in a MTJ structure (ferromagnetic/insulator/ferromagnetic), one electrode should be fixed or pinned to a specific direction of magnetization in order to have a unidirectional magnetic anisotropy with higher exchange field. This can be achieved by a phenomenon of exchange bias observed between the ferromagnetic (FM) and the anti-ferromagnetic (AFM) materials as a shift in a hysteresis loop when they are deposited in a presence of an external applied field.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | CHEMISTRY AND MATERIALS > Composite Materials |
| Depositing User: | Mrs SK Pratibha |
| Date Deposited: | 09 Jun 2015 07:49 |
| Last Modified: | 09 Jun 2015 07:49 |
| URI: | http://nal-ir.nal.res.in/id/eprint/12118 |
Actions (login required)
 |
View Item |
