Kumar, A Ashok and Alagar, M and Rao, RMVGK (2001) Studies on thermal and morphological behavior of Siliconized Epoxy Bismaleimide Matrices. Journal of Applied Polymer Science, 81. pp. 2330-2346.
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Abstract
Novel bismaleimide-modified siliconized epoxy intercrosslinked network systems were developed. Siliconized epoxy systems containing 5, 10, and 15% siloxane units were prepared using epoxy resin and hydroxyl-terminated polydimethylsiloxane13; (HTPDMS) with y-aminopropyltriethoxysilane (y-APS) as a compatibilizer and dibutyltindilaurate as a catalyst. The siliconized epoxy systems were further modified with 5, 10, and 15% (wt %) of bismaleimide [(N,N' -bismaleimido-4,4' -dipherlylmethane) (BMD] and cured by diaminodiphenylmethane (DDM). Differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), and heat-distortion temperature measurement of the matrix samples were carried out to assess their thermal behavior. DSC thermograms of the EMI-modified epoxy systems show unimodel reaction exotherms. The glass thermal transition (Tr) of the cured BMI-modified epoxy and siliconized epoxy systems increases with increasing BMI content. Thermo'gravimetric analysis and heat-distortion temperature measurements indicate that the thermal degradation temperature and heat-distortion temperature of the EMI-modified epoxy and siliconized epoxy systems increase with increasing BMI content. The morphology of the BMI modified siliconized epoxy systems was also studied by scanning electron microscopy
| Item Type: | Article |
|---|---|
| Additional Information: | Copyright for this article belongs to John Wiley amp; Sons |
| Uncontrolled Keywords: | y-APS;Dibutyltindilauratc;Diaminodiphenylmethane;Siliconized epoxy13; resin;EMI-modified siliconized epoxy resin;Glass transition temperature;Thermal13; stability;Heat-distortion temperature;SEM micrograph13; |
| Subjects: | ENGINEERING > Fluid Mechanics and Thermodynamics |
| Depositing User: | Ms. Alphones Mary |
| Date Deposited: | 03 Apr 2006 |
| Last Modified: | 24 May 2010 04:10 |
| URI: | http://nal-ir.nal.res.in/id/eprint/1173 |
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