Ga as an additive in the As2Te3 glass

Sudha, Mahadevan and Giridhar, A (2001) Ga as an additive in the As2Te3 glass. Journal of Materials Science, 36 (22). pp. 5325-5332. ISSN 0022x2013;2461

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    Abstract

    Results of measurements of the mean atomic volume (V), the glass transition temperature13; (Tg), the activation energy for glass transition (Et) and the d. c. electrical conductivity (x3C3;) are13; reported and discussed for ten glass compositions of the Gax2013;Asx2013;Te system. The glasses13; studied can be represented as Gax(As0.4Te0.6)100x2212;x glasses, with the additive Ga ranging13; from 0 to 12 atomic percent (at.%) in the parent As2Te3 glass. In the Gax(As0.4Te0.6)100x2212;x13; glasses, changes in slope are observed in the V, Tg, Et, x3C3; and other electronic properties, at13; the composition with a Ga content of 2 at.%. The results are compared with those obtained13; on introduction of Ag and Cu to the As2Te3 and the [0.5As2Te3x2013;0.5As2Se3] glasses. Analysis13; of the data suggest formation of GaAs, Ga2Te3 and excess Te structural units (s.u.) in lieu of13; some of the original As2Te3 s.u., for addition of Ga up to 2 at.% to the parent As2Te3 glass;13; for higher Ga contents, formation of GaAs, GaTe and excess Te s.u. are indicated.

    Item Type: Journal Article
    Uncontrolled Keywords: Glass transition temperature:Ga as;Gax2013;Asx2013;Te system
    Subjects: CHEMISTRY AND MATERIALS > Metals and Metallic Materials
    Division/Department: Materials Science Division, Materials Science Division
    Depositing User: Ms Indrani V
    Date Deposited: 27 May 2005
    Last Modified: 24 May 2010 09:39
    URI: http://nal-ir.nal.res.in/id/eprint/774

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