Dutta, Soma and Shubha, V and Ramesh, TG and D'Sa, Florita (2009) Thermal and electronic properties of Bi1 x2212; xSbx alloys. Journal of Alloys and Compounds, 467 (1-2). pp. 305-309.Full text not available from this repository.
Polycrystalline Bi1 x2212; xSbx (x = 0.10, 0.12 and 0.15) semiconducting alloys were synthesized by mechanical alloying in order to achieve homogeneous thermoelectric materials with improved mechanical strength. The homogeneity of the powder samples were repeatedly checked by X-ray diffraction and scanning electron microscopy to standardize the milling conditions. The best possible homogenized material was developed with the milling conditions of BPR 30:1, ball diameter 30 mm, 400 rpm and milling time of 15 h. The electrical resistivity, thermoelectric power and thermal conductivity were measured in the temperature range 300x2013;500 K. It was found through these experiments that the composition with x = 0.12 behaved in a normal semiconducting way, whereas the other two compositions (x = 0.10 and 0.15) showed degenerate semiconductor behaviour. These features have been qualitatively explained from the band structure and interband scattering mechanisms.
|Item Type:||Journal Article|
|Uncontrolled Keywords:||Semiconductors;Mechanical alloying;Electronic transport;High pressure;Thermal analysis|
|Subjects:||AERONAUTICS > Aeronautics (General)|
|Division/Department:||Materials Science Division, Materials Science Division, Materials Science Division, Materials Science Division|
|Depositing User:||Ms. Alphones Mary|
|Date Deposited:||03 Jun 2009|
|Last Modified:||24 May 2010 09:56|
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