Optical properties and thermal stability of TiAlN/AlON tandem absorber prepared by re active DC/RF magnetron sputtering

Barshilia, Harish C and Selvakumar, N and Rajam, KS and Biswas, A (2008) Optical properties and thermal stability of TiAlN/AlON tandem absorber prepared by re active DC/RF magnetron sputtering. Sol. Energy Mater. Sol. Cells, 92 (11). pp. 1425-1433. ISSN 0927-0248

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    Abstract

    Spectrally selective TiAIN/AION tandem absorbers were deposited on copper and stainless steel substrates using a reactive DC/RF magnetron sputtering system. The compositions and thicknesses of the individual component layers were optimized to achieve high absorptance (alpha = 0.931-0.942) and low emittance (epsilon = 0.05-0.06) on copper substrate. The experimental spectroscopic ellipsometric data have been fitted with the theoretical models to derive the dispersion of the optical constants (n and k). In order to study the thermal stability of the tandem absorbers, they were subjected to heat treatment (in air and vacuum) for different durations and temperatures. The tandem absorber deposited on Cu substrates exhibited high solar selectivity (alpha/epsilon) of 0.946/0.07 even after heat treatment in air up to 600 degrees C for 2 h. At 625 degrees C, the solar selectivity decreased significantly on Cu substrates (e.g., alpha/epsilon = 0.924/ 0.30). The tandem absorber on Cu substrates was also stable in air up to 100h at 400 degrees C with a solar selectivity of 0.919/0.06. Studies on the accelerated aging tests indicated that the activation energy for the degradation of the tandem absorber is of the order of 100 kJ/mol

    Item Type: Journal Article
    Uncontrolled Keywords: Tandem absorber;Titanium aluminum nitride;Aluminum oxynitride; Optical properties;Sputtering
    Subjects: CHEMISTRY AND MATERIALS > Chemistry and Materials (General)
    Division/Department: Surface Engineering Division, Surface Engineering Division, Surface Engineering Division, Other
    Depositing User: Ms. Alphones Mary
    Date Deposited: 03 Dec 2008
    Last Modified: 27 Aug 2012 15:41
    URI: http://nal-ir.nal.res.in/id/eprint/4928

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