Structural and electrical properties of TiO2 thin films prepared by thermal oxidation

Chowdhury, P and Barshilia, Harish C and Selvakumar, N and Deepthi, B and Rajam, KS and Chaudhuri, AR and Krupanidhi, SB (2008) Structural and electrical properties of TiO2 thin films prepared by thermal oxidation. Physica B, 403 (19-20). 3718 -3723. ISSN 0921-4526

Full text available as:
[img] PDF
Restricted to CSIR-NAL Registered users only

Download (514Kb)

    Abstract

    Thin films of TiO2 were grown on n-type Si substrate by thermal oxidation of Ti films deposited by dc sputtering. The phase purity of TiO2 was confirmed by Raman spectroscopy, and secondary ion mass spectroscopy was used to analyze the interfacial and chemical composition of the TiO2 thin films. Metal-oxide-semiconductor capacitors with Al as the top electrode were fabricated to study the electrical properties of the TiO2 films. The current conduction mechanisms in thermally grown TiO2 films were observed to follow the space charge-limited current mechanism followed by a Schottky emission process both at and above room temperature. Three orders of magnitude of reduction in current density were observed for thermally grown samples while measured the I-V characteristics at 77 K and Fowler-Nordheim (F-N) tunneling was found to be a dominant conduction mechanism at higher biasing voltages.

    Item Type: Journal Article
    Uncontrolled Keywords: Titanium oxide;Metal-oxide-semiconductor;Oxidation;Sputtering
    Subjects: PHYSICS > Physics(General)
    Division/Department: Surface Engineering Division, Surface Engineering Division, Surface Engineering Division, Surface Engineering Division, Surface Engineering Division, Other, Other
    Depositing User: Ms. Alphones Mary
    Date Deposited: 01 Apr 2009
    Last Modified: 27 Aug 2012 15:37
    URI: http://nal-ir.nal.res.in/id/eprint/4927

    Actions (login required)

    View Item