Synthesis and sintering of Sic under high pressure and high13; temperature

Bhaumik, SK and Divakar, C and Ushadevi, S and Singh, AK (1999) Synthesis and sintering of Sic under high pressure and high13; temperature. Journal of Materials Research, 14 (3). pp. 906-911.

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Abstract

Starting from elemental powders, simultaneous synthesis and compaction of S i c were conducted at 3 GPa pressure and temperatures in the range 2100-2900 K. The sintered13; compacts were characterized by x-ray diffraction, microhardness measurements, and microscopic studies. The efficiency of formation of S i c was dependent on the particle size of the silicon powder, crystallinity of the reactant carbon, molar ratio of silicon and carbon, and synthesis temperature and time. Carbon in excess of the stoichiometric amount was required to obtain compacts free from residual silicon. The S i c samples, with a Si : C molar ratio 1 : 1.05, prepared at 2100 K for 300 s had a density and hardness of 3.21 g/cm' (98.8% of theoretical density) and 22 GPa, respectively. The crystal structure of the S i c depended on the synthesis temperature. Pure p - S i c in the temperature range 2100-2500 K, and a mixture of a - and p - S i c above 2500 K were obtained. The amp;Sic was highly crystalline and nearly defect-free.

Item Type:	Journal Article
Additional Information:	Copyright for this article belongs to Materials Research Society
Uncontrolled Keywords:	High pressure;Microhardness measurements;Crystallinity
Subjects:	PHYSICS > Physics(General)
Division/Department:	Materials Science Division, Materials Science Division, Materials Science Division, Materials Science Division
Depositing User:	M/S ICAST NAL
Date Deposited:	20 Aug 2008
Last Modified:	17 Jun 2010 13:50
URI:	http://nal-ir.nal.res.in/id/eprint/4890

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