Bhaumik, SK and Divakar, C and Ushadevi, S and Singh, AK (1995) Sintering of a - sic at high pressures and temperatures. In: Proceedings of the National Conference on High Pressure Science and Technology, 10-11 Oct 1994, Bangalore, India.
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Abstract
The high temperature properties of sintered silicon carbide are critically dependent on additives which are used for consolidation by conventional hot pressing into pore-free bodies. The sintering aids provide increase in shrink-age rate and high densities at low sintering temperatures. However, the presence of sintering aids results in a second phase at the grain boundaries which13; has adverse effects on the high temperature properties. An effort has been made to produce fully dense self bonded Sic without using sintering aids by high pressure-high temperature sintering. The Sic powder has been sintered13; at pressures (1.7-3.0 GPa) at 18OO0C for 5-30 minutes. The densities 'of the sintered compacts are gt; 99% theoretical density. The compacts show room temperature hardness values in the range 26.7-33.5 GPa. The indentation frac-13; ture toughness values range between 3.5 and 3.9 MPaJ;;E. The microstructural studies have shown that pressure plays an important role in the densification and bonding of silicon carbide.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | Sintering;High pressure;Silicon carbide |
| Subjects: | PHYSICS > Physics(General) |
| Division/Department: | Materials Science Division, Materials Science Division, Materials Science Division, Materials Science Division |
| Depositing User: | M/S ICAST NAL |
| Date Deposited: | 09 Jul 2008 |
| Last Modified: | 17 Jun 2010 13:36 |
| URI: | http://nal-ir.nal.res.in/id/eprint/4828 |
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