Kinetics of Bi(II)transition under very high pressurization rates

Singh, AK (1990) Kinetics of Bi(II)transition under very high pressurization rates. High Pressure Research, 4 (1). pp. 336-338.

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Abstract

The occurrence of Bi(I) x2192; Bi(II) transition has been examined under constant pressurization rates in the range 0.03 to 0.1GPa/(x3BC;s) by monitoring the electrical resistance of the specimen as a function of time. Such high pressurization rates have been obtained by impacting a tungsten carbide opposed anvil setup with a low velocity projectile [Rev. Sci. Instum. 60, 253 (1989)]. The time taken for the completion of the transition decreases with the increasing pressurization rate.

Item Type:	Journal Article
Uncontrolled Keywords:	Pressure pulse;Bismuth transition;Transition kinetics
Subjects:	CHEMISTRY AND MATERIALS > Chemistry and Materials (General)
Division/Department:	Materials Science Division
Depositing User:	M/S ICAST NAL
Date Deposited:	23 Jun 2008
Last Modified:	24 May 2010 09:56
URI:	http://nal-ir.nal.res.in/id/eprint/4754

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