Singh, AK (1990) Kinetics of Bi(II)transition under very high pressurization rates. High Pressure Research, 4 (1). pp. 336-338.Full text not available from this repository.
The occurrence of Bi(I) x2192; Bi(II) transition has been examined under constant pressurization rates in the range 0.03 to 0.1GPa/(x3BC;s) by monitoring the electrical resistance of the specimen as a function of time. Such high pressurization rates have been obtained by impacting a tungsten carbide opposed anvil setup with a low velocity projectile [Rev. Sci. Instum. 60, 253 (1989)]. The time taken for the completion of the transition decreases with the increasing pressurization rate.
|Item Type:||Journal Article|
|Uncontrolled Keywords:||Pressure pulse;Bismuth transition;Transition kinetics|
|Subjects:||CHEMISTRY AND MATERIALS > Chemistry and Materials (General)|
|Division/Department:||Materials Science Division|
|Depositing User:||M/S ICAST NAL|
|Date Deposited:||23 Jun 2008|
|Last Modified:||24 May 2010 09:56|
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