Pressure-induced 4f-5d electron collapse in ytterbium monotelluride

Chatterjee, A and Singh, AK and Jayaraman, A and Bucher, E (1971) Pressure-induced 4f-5d electron collapse in ytterbium monotelluride. Physical Review Letters, 27 (23). pp. 1571-1573.

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    Abstract

    The pressure-volume relationship in YbTe has been studied by high-pressure x-ray diffraction up to 300Kbar.This relationship is anomalous in the region 150-190Kbar indicating a continuous electronic collapse with pressure, in which the Yb2+changes to Yb34 state.This must involve 4f-5d electron promotion and result in a semiconductor-to-metal transition.The behavior of suggests that to rare-earth chalcogenides with large band gap a continuous transition would be favored

    Item Type: Journal Article
    Additional Information: Copyright to this article belongs to American Physical Society
    Uncontrolled Keywords: Semiconductor;Ytterbium monotelluride;High pressure x-ray
    Subjects: CHEMISTRY AND MATERIALS > Metals and Metallic Materials
    CHEMISTRY AND MATERIALS > Chemistry and Materials (General)
    Division/Department: Materials Science Division, Materials Science Division, Materials Science Division, Other
    Depositing User: M/S ICAST NAL
    Date Deposited: 22 May 2008
    Last Modified: 17 Jun 2010 13:28
    URI: http://nal-ir.nal.res.in/id/eprint/4723

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