Chatterjee, A and Singh, AK and Jayaraman, A and Bucher, E (1971) Pressure-induced 4f-5d electron collapse in ytterbium monotelluride. Physical Review Letters, 27 (23). pp. 1571-1573.
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Abstract
The pressure-volume relationship in YbTe has been studied by high-pressure x-ray diffraction up to 300Kbar.This relationship is anomalous in the region 150-190Kbar indicating a continuous electronic collapse with pressure, in which the Yb2+changes to Yb34 state.This must involve 4f-5d electron promotion and result in a semiconductor-to-metal transition.The behavior of suggests that to rare-earth chalcogenides with large band gap a continuous transition would be favored
| Item Type: | Journal Article |
|---|---|
| Additional Information: | Copyright to this article belongs to American Physical Society |
| Uncontrolled Keywords: | Semiconductor;Ytterbium monotelluride;High pressure x-ray |
| Subjects: | CHEMISTRY AND MATERIALS > Metals and Metallic Materials CHEMISTRY AND MATERIALS > Chemistry and Materials (General) |
| Division/Department: | Materials Science Division, Materials Science Division, Materials Science Division, Other |
| Depositing User: | M/S ICAST NAL |
| Date Deposited: | 22 May 2008 |
| Last Modified: | 17 Jun 2010 13:28 |
| URI: | http://nal-ir.nal.res.in/id/eprint/4723 |
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