Transport properties under pressure in HgSe

Ramesh, TG and Shubha, V (1982) Transport properties under pressure in HgSe. Journal of Physics C Solid state Physics, 15 (30). pp. 6193-6198. ISSN 0022-3719

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Abstract

Measurements of the Seebeck coefficient or thermoelectric power (TEP) of HgSe at high pressures confirm the existence of an inverted band ordering, similar to that in HgTe. The pressure-induced phase transition from the zincblende to the cinnabar-type structure, which occurs around 10 kbar, is manifested as a large change in TEP. The temperature behaviour of the resistivity has also been studied in both of these structural modifications. These studies indicate that the energy gap in the high-pressure semiconducting phase decreases with increase of pressure; this is similar to what is observed in the elemental semiconductors Se and Te13;

Item Type: Journal Article
Uncontrolled Keywords: Energy gap;High-pressure solid-state phase transformations13; ;Semiconductors;Mercury compounds;Seebeck effect
Subjects: CHEMISTRY AND MATERIALS > Chemistry and Materials (General)
Division/Department: Materials Science Division, Materials Science Division
Depositing User: Ms Indrani V
Date Deposited: 06 Feb 2008
Last Modified: 24 May 2010 09:55
URI: http://nal-ir.nal.res.in/id/eprint/4174

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