Nadar, KG (1975) Thermal variation of emitter base voltage of composite transistor. Institution of Electronics and Telecommunication Engineers, 21 . pp. 658-660.Full text not available from this repository.
Thermal variation of emitter base voltage of composite transistor has been computed for a wide dynamic range. At the outset a postulate is given in terms of its essential temperature dependent linear and nonlinear properties. The conjoint occurrence of fundamental equation is derived. Numerical results which are relevant for the interpretation of existence of symmetries in change of emitter base voltage and effect of high emitter series resistance of inverse transistor, are briefly discussed.
|Item Type:||Journal Article|
|Uncontrolled Keywords:||Junction transistors;Temperature effects;Thermal stability;Volt-ampere charateristics;Bias;emittters;P-N-P Junctions;Silicon transistors;Transistor circuits|
|Subjects:||ENGINEERING > Electronics and Electrical Engineering|
|Division/Department:||Engineering Services Division|
|Depositing User:||M/S ICAST NAL|
|Date Deposited:||31 Jan 2007|
|Last Modified:||24 May 2010 09:54|
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