Thermal variation of emitter base voltage of composite transistor

Nadar, KG (1975) Thermal variation of emitter base voltage of composite transistor. Institution of Electronics and Telecommunication Engineers, 21 . pp. 658-660.

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Abstract

Thermal variation of emitter base voltage of composite transistor has been computed for a wide dynamic range. At the outset a postulate is given in terms of its essential temperature dependent linear and nonlinear properties. The conjoint occurrence of fundamental equation is derived. Numerical results which are relevant for the interpretation of existence of symmetries in change of emitter base voltage and effect of high emitter series resistance of inverse transistor, are briefly discussed.

Item Type: Journal Article
Uncontrolled Keywords: Junction transistors;Temperature effects;Thermal stability;Volt-ampere charateristics;Bias;emittters;P-N-P Junctions;Silicon transistors;Transistor circuits
Subjects: ENGINEERING > Electronics and Electrical Engineering
Division/Department: Engineering Services Division
Depositing User: M/S ICAST NAL
Date Deposited: 31 Jan 2007
Last Modified: 24 May 2010 09:54
URI: http://nal-ir.nal.res.in/id/eprint/3878

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