Charged defects-controlled conductivity in Ge-In-Se glasses

Mahadevan, Sudha and Giridhar, A (1994) Charged defects-controlled conductivity in Ge-In-Se glasses. Journal of Materials Science, 29 (14). pp. 3837-3842.

Full text available as:
[img] PDF
Download (504Kb)

    Abstract

    The variation of the d.c. electrical conductivity, ?, with composition and temperature was investigated for glasses of the Ge-In-Se system. The results indicate a decrease in the activation energy for electrical conductivity, ?E, and an increase in ? on introduction of indium into Ge-Se glasses. The changes in ?E and ? with composition (selenium content in the glasses) are identical for the Gex In5 Se95-x and Gex In8Se92-x families. The results have been traced to the conduction controlled by charged defects in these chalcogenide glasses. The changes in ?E and ? have been explained by a shift in the Fermi level, being brought by the introduction of indium.

    Item Type: Journal Article
    Additional Information: Copyright for this article belongs to Springer-Verlag
    Uncontrolled Keywords: Composition effects;Defects;Electric charge;Electric conductivity of solids;Electron energy levels; Semiconducting germanium compounds;Semiconducting indium compounds;Semiconducting selenium compounds; Thermal effects;Activation energy;Chalcogenide glasses;Charge defects controlled conductivity;Fermi level;Germanium indium selenide glasses;Semiconducting glass
    Subjects: CHEMISTRY AND MATERIALS > Chemistry and Materials (General)
    Division/Department: Materials Science Division, Materials Science Division
    Depositing User: Mr Vijaianand SK
    Date Deposited: 31 Jan 2008
    Last Modified: 24 May 2010 09:38
    URI: http://nal-ir.nal.res.in/id/eprint/336

    Actions (login required)

    View Item