Charged defects-controlled conductivity in Ge-In-Se glasses

Mahadevan, Sudha and Giridhar, A (1994) Charged defects-controlled conductivity in Ge-In-Se glasses. Journal of Materials Science, 29 (14). pp. 3837-3842.

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Abstract

The variation of the d.c. electrical conductivity, ?, with composition and temperature was investigated for glasses of the Ge-In-Se system. The results indicate a decrease in the activation energy for electrical conductivity, ?E, and an increase in ? on introduction of indium into Ge-Se glasses. The changes in ?E and ? with composition (selenium content in the glasses) are identical for the Gex In5 Se95-x and Gex In8Se92-x families. The results have been traced to the conduction controlled by charged defects in these chalcogenide glasses. The changes in ?E and ? have been explained by a shift in the Fermi level, being brought by the introduction of indium.

Item Type: Article
Additional Information: Copyright for this article belongs to Springer-Verlag
Uncontrolled Keywords: Composition effects;Defects;Electric charge;Electric conductivity of solids;Electron energy levels; Semiconducting germanium compounds;Semiconducting indium compounds;Semiconducting selenium compounds; Thermal effects;Activation energy;Chalcogenide glasses;Charge defects controlled conductivity;Fermi level;Germanium indium selenide glasses;Semiconducting glass
Subjects: CHEMISTRY AND MATERIALS > Chemistry and Materials (General)
Depositing User: Users 3 not found.
Date Deposited: 31 Jan 2008
Last Modified: 24 May 2010 04:08
URI: http://nal-ir.nal.res.in/id/eprint/336

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