Mahadevan, Sudha and Giridhar, A (1994) Charged defects-controlled conductivity in Ge-In-Se glasses. Journal of Materials Science, 29 (14). pp. 3837-3842.
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Abstract
The variation of the d.c. electrical conductivity, ?, with composition and temperature was investigated for glasses of the Ge-In-Se system. The results indicate a decrease in the activation energy for electrical conductivity, ?E, and an increase in ? on introduction of indium into Ge-Se glasses. The changes in ?E and ? with composition (selenium content in the glasses) are identical for the Gex In5 Se95-x and Gex In8Se92-x families. The results have been traced to the conduction controlled by charged defects in these chalcogenide glasses. The changes in ?E and ? have been explained by a shift in the Fermi level, being brought by the introduction of indium.
| Item Type: | Journal Article |
|---|---|
| Additional Information: | Copyright for this article belongs to Springer-Verlag |
| Uncontrolled Keywords: | Composition effects;Defects;Electric charge;Electric conductivity of solids;Electron energy levels; Semiconducting germanium compounds;Semiconducting indium compounds;Semiconducting selenium compounds; Thermal effects;Activation energy;Chalcogenide glasses;Charge defects controlled conductivity;Fermi level;Germanium indium selenide glasses;Semiconducting glass |
| Subjects: | CHEMISTRY AND MATERIALS > Chemistry and Materials (General) |
| Division/Department: | Materials Science Division, Materials Science Division |
| Depositing User: | Mr Vijaianand SK |
| Date Deposited: | 31 Jan 2008 |
| Last Modified: | 24 May 2010 09:38 |
| URI: | http://nal-ir.nal.res.in/id/eprint/336 |
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