Pressure studies on SmO.82DYO.18S

Shubha, V and Ramesh, TG (1988) Pressure studies on SmO.82DYO.18S. Technical Report. National Aeronautical Laboratory, Bangalore, India.

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    We report here some new measurements on the thermoelectric13; behaviour of the doped system SmO.82DYO.18S upto 25 Kbar and 300xB0;C. It has been found that an isostructural electronic phase transition occurs in this system around 2 Kbar at ambient temperature. The P-T diagram delineated from these experimental13; results exhibits a critical point around 280xB0;C and 4.75 Kbar.

    Item Type: Proj.Doc/Technical Report (Technical Report)
    Uncontrolled Keywords: Critical point;Valence fluctuation
    Subjects: CHEMISTRY AND MATERIALS > Chemistry and Materials (General)
    Division/Department: Materials Science Division, Materials Science Division
    Depositing User: M/S ICAST NAL
    Date Deposited: 08 Nov 2006
    Last Modified: 24 May 2010 09:52

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