Bulk oxygen in a-silicon nitride and its effect on IR absorption

Lakshminarasimham, PS and Gopalakrishnan, PS (1995) Bulk oxygen in a-silicon nitride and its effect on IR absorption. Journal of Materials Science Letters, 14 (24). pp. 1801-1803.

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    Abstract

    The existence of bulk oxygen in the lattice of silicon nitride is studied. In the study, silicon nitride, primarily ?-phase, is prepared by different methods and either powder or whiskers obtained, depending upon the method of preparation. On characterizing the samples, it is observed that they have almost identical XRD patterns, whereas there IR absorption spectra shows significant differences. This prompted another investigation and its results are presented.

    Item Type: Journal Article
    Additional Information: Copyright for this article belongs to Springer-Verlag
    Uncontrolled Keywords: Crystal whiskers;Heating;Infrared radiation;Infrared spectroscopy;Lattice constants;Light absorption;Nitrogen; Oxygen;Reduction;Silica;Thermal effects;X ray diffraction; Ammonolysis;Carbothermal reduction;Kjeldahl method; Nitridation;Silicon nitride
    Subjects: CHEMISTRY AND MATERIALS > Metals and Metallic Materials
    Division/Department: Materials Science Division, Materials Science Division
    Depositing User: Mr Vijaianand SK
    Date Deposited: 31 Jan 2008
    Last Modified: 24 May 2010 09:38
    URI: http://nal-ir.nal.res.in/id/eprint/298

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