Bulk oxygen in alpha-silicon nitride and its effect on IR absorption

Lakshminarasimham, PS and Gopalakrishnan, PS (1995) Bulk oxygen in alpha-silicon nitride and its effect on IR absorption. Journal of Materials Science Letters, 14 (24). pp. 1801-1803. ISSN 0261-8028

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Abstract

Results of an IR absorption characterization of alpha silicon nitride specimens prepared in the laboratory by several different procedures are presented. The results suggest the presence of bulk oxygen in the silicon nitride lattice. It is concluded that, although it is not necessary that alpha silicon nitride have bulk oxygen to stabilize its structure, it can accommodate a considerable amount of bulk oxygen without becoming oxynitride structurally.

Item Type:	Journal Article
Additional Information:	Copyright for this article belongs to Springer-Verlag
Uncontrolled Keywords:	Silicon nitrides;Infrared absorption;Oxygen;Hexagonal cells; Close packed lattices;Oxynitrides;X-ray diffraction;Diffraction patterns
Subjects:	CHEMISTRY AND MATERIALS > Nonmetallic Materials
Division/Department:	Materials Science Division, Materials Science Division
Depositing User:	M/S ICAST NAL
Date Deposited:	09 Oct 2006
Last Modified:	24 May 2010 09:51
URI:	http://nal-ir.nal.res.in/id/eprint/2927

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