Sheela, K Ramasesha and Shobu, K (1999) Oxidation of MoSi2 and MoSi2-based materials. Bull. Mater. Sci.,, 22 (4). pp. 769-773.
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Abstract
Oxidation experiments, at 500CC, of MoSi z and MoSi2-based compounds such as Mo(A1,Si)2 and MoSiz + I wt% C compacts have been carried out. These compacts were prepared by in situ synthesis and a compaction method, starting from the elemental powders. For comparison, commercial MoSi z and Mo(AI,Si)2 infiltrated into SiC preform were also studied under similar conditions. It was found that the synthesized high density MoSi2 and Mo(AI,Si)2 infiltrated into SiC preform did not show any oxidation even after 100 h of heating in air. The colour of the polished surfaces of commercial MoSi2, Mo(AI,Si)2 and MoSiz + 1 wt% C had changed. The SEM of Mo(At,Si)2 showed open blisters with rods of MoO3 in them whereas MoSiz + I wt% C surface had MoO3 rods but no blisters and the oxidation was superficial with no penetration into the compact. It is suggested that in compounds, the presence of small amounts of impurities is not as detrimental to pesting as presence of defects like open pores or cracks. Hence, high density of the compact is essential for the prevention of complete disintegration of the compact
| Item Type: | Journal Article |
|---|---|
| Additional Information: | Copyright for this article belongs to Indian Academy of Sciences |
| Uncontrolled Keywords: | Oxidation; quot;PESTquot;ing; defects;Hardness |
| Subjects: | CHEMISTRY AND MATERIALS > Metals and Metallic Materials |
| Division/Department: | Materials Science Division, Other |
| Depositing User: | Ms. Alphones Mary |
| Date Deposited: | 02 May 2006 |
| Last Modified: | 24 May 2010 09:41 |
| URI: | http://nal-ir.nal.res.in/id/eprint/1268 |
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