Development of pinned electrode for magnetic tunnel junction with perpendicular magnetic anisotropy

Kulkarni, PD and Krishnan, M and Barshilia, Harish C and Predeep, P and Chowdhury, P (2013) Development of pinned electrode for magnetic tunnel junction with perpendicular magnetic anisotropy. In: IUMRS-ICA-2013, 16 Dec 2013, IISc, Bangalore.

Full text available as:
[img] PDF
Download (37Kb)

    Abstract

    The magnetic electrodes with perpendicular magnetic anisotropy (PMA) have gained a great deal of attention in magnetic information storage technology. The use of perpendicular magnetic tunnel junctions (p-MTJs) enhances the storage density due to the reduction in area required for a unit bit. Among two electrodes in a MTJ structure (ferromagnetic/insulator/ferromagnetic), one electrode should be fixed or pinned to a specific direction of magnetization in order to have a unidirectional magnetic anisotropy with higher exchange field. This can be achieved by a phenomenon of exchange bias observed between the ferromagnetic (FM) and the anti-ferromagnetic (AFM) materials as a shift in a hysteresis loop when they are deposited in a presence of an external applied field.

    Item Type: Conference or Workshop Item (Paper)
    Subjects: CHEMISTRY AND MATERIALS > Composite Materials
    Division/Department: Surface Engineering Division, Surface Engineering Division, Surface Engineering Division, Other, Surface Engineering Division
    Depositing User: Mrs SK Pratibha
    Date Deposited: 09 Jun 2015 13:19
    Last Modified: 09 Jun 2015 13:19
    URI: http://nal-ir.nal.res.in/id/eprint/12118

    Actions (login required)

    View Item