Luminescence and defect studies of YAlO3:Dy3+, Sm3+ single crystals exposed to 100 MeV Si7+ ion beam

Premkumar, HB and Sunitha, DV and Singh, F and Nagabhushana, H and Sharma, SC and Nagabhushana, BM and Zhao, G and Cheng, J and Chakradhar, RPS (2012) Luminescence and defect studies of YAlO3:Dy3+, Sm3+ single crystals exposed to 100 MeV Si7+ ion beam. Journal of Luminescence, 132 (10). pp. 2679-2683. ISSN 0022-2313

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Abstract

Ionoluminescence (IL) and photoluminescence (PL) spectra for different rare earth ions (Sm3+ and Dy3+) activated YAlO3 single crystals have been induced with 100 MeV Si7+ ions with fluence of 7.81×1012 ions cm−2. Prominent IL and PL emission peaks in the range 550–725 nm in Sm3+ and 482–574 nm in Dy3+ were recorded. Variation of IL intensity in Dy3+ doped YAlO3 single crystals was studied in the fluence range 7.81×1012–11.71×1012 ions cm−2. IL intensity is found to be high in lower ion fluences and it decreases with increase in ion fluence due to thermal quenching as a result of an increase in the sample temperature caused by ion beam irradiation. Thermoluminescence (TL) spectra were recorded for fluence of 5.2×1012 ions cm−2 on pure and doped crystals at a warming rate of 5 °C s−1 at room temperature. Pure crystals show two glow peaks at 232 (Tg1) and 328 °C (Tg2). However, in Sm3+ doped crystals three glow peaks at 278 (Tg1), 332 (Tg2) and 384 °C (Tg3) and two glow peaks at 278 (Tg1) and 331 °C (Tg2) in Dy3+ was recorded. The kinetic parameters (E, b s) were estimated using glow peak shape method. The decay of IL intensity was explained by excitation spike model.

Item Type: Journal Article
Uncontrolled Keywords: Luminescence;Ion irradiation;Single crystals;YAlO3;Dy3+;Sm3+
Subjects: AERONAUTICS > Aeronautics (General)
CHEMISTRY AND MATERIALS > Chemistry and Materials (General)
PHYSICS > Physics(General)
Division/Department: Other, Other, Other, Other, Other, Other, Other, Other, Surface Engineering Division
Depositing User: Ms. Alphones Mary
Date Deposited: 05 Apr 2013 14:15
Last Modified: 05 Apr 2013 14:15
URI: http://nal-ir.nal.res.in/id/eprint/11577

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